Pressure sensing device with cavity and related methods

ABSTRACT

A pressure sensing device may include a body configured to distribute a load applied between first and second parts positioned one against the other, and a pressure sensor carried by the body. The pressure sensor may include a support body, and an IC die mounted with the support body and defining a cavity. The IC die may include pressure sensing circuitry responsive to bending associated with the cavity, and an IC interface coupled to the pressure sensing circuitry.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. application Ser.No. 15/914,832, filed on Mar. 7, 2018, which is a continuation of U.S.application Ser. No. 14/626,153, filed on Feb. 19, 2015, now issued asU.S. Pat. No. 9,939,338, which applications are hereby incorporatedherein by reference.

TECHNICAL FIELD

The present disclosure relates to the field of electronic devices, and,more particularly, to integrated circuits and related methods.

BACKGROUND

In solid structures, particularly in load-bearing structures of, forexample, bridges, buildings, tunnels, railways, containment walls, dams,embankments, pipelines and underground structures of metropolitantransport lines, and so on, it may be important to monitor, in manypoints, significant parameters, like, for example, pressure, temperatureand mechanical stresses. Such monitoring is carried out periodically orcontinuously, and is useful both at the initial stage and during thelifetime of the structure.

For this purpose, an approach in this field includes the application ofelectronic monitoring devices based on electronic sensors, capable ofproviding good performance at low cost. Usually, such devices areapplied onto the surface of the structures to be monitored, or insiderecesses already in the structure and accessible from the outside.

Such devices are not able to exhaustively detect the parameters withinthe structure to be monitored, which it may be useful to know toevaluate the quality of the structure, its safety, its ageing, itsreaction to variable atmospheric conditions, and so on. Moreover, suchdevices can only typically be applied after the structure has beenbuilt, and not while it is being built. Therefore, they may be unable toevaluate possible initial or internal defects.

SUMMARY

Generally speaking, a pressure sensing device may include a bodyconfigured to distribute a load applied between first and second partspositioned one against the other, and at least one pressure sensorcarried by the body. The at least one pressure sensor may include asupport body, and an integrated circuit (IC) die mounted with thesupport body and defining a cavity therebetween. The IC die may includepressure sensing circuitry responsive to bending associated with thecavity, and an IC interface coupled to the pressure sensing circuitry.

In some embodiments, the two parts may be joined by a threaded fastener,and the at least one pressure sensor is carried by a ring-shaped body.In other embodiments, the two parts may be at least partiallyoverlapped.

The IC interface may include a transceiver circuit, and electricallyconductive antenna traces coupled thereto. The at least one pressuresensor may comprise at least one substrate adjacent the IC die andcomprising additional electrically conductive antenna traces coupled tothe transceiver circuit. The pressure sensing device may further includean arm extension extending outwardly from the body, and the electricallyconductive antenna traces may be carried by the arm extension.

Additionally, the additional electrically conductive antenna traces maysurround the IC die. The at least one substrate may be canted withrespect to the IC die. The at least one pressure sensor may comprise abonding layer between the IC die and the support body. For example, thesupport body may comprise at least one of a ceramic material, a glassmaterial, and a silicon material.

In some embodiments, the body may have at least one slot therein, andthe at least one pressure sensor may be in the at least one slot. Thepressure sensing device may comprise encapsulation material in the atleast one slot and surrounding the at least one pressure sensor. Thebody may comprise encapsulation material.

Another embodiment is also directed to a pressure sensing device. Thepressure sensing device may include a body configured to distribute aload applied between first and second parts positioned one against theother, and at least one pressure sensor carried by the body. The atleast one pressure sensor may include an IC die mounted with the bodyand defining a cavity with adjacent portions of the body. The IC die mayinclude pressure sensing circuitry responsive to bending associated withthe cavity, and an IC interface coupled to the pressure sensingcircuitry. More specifically, the at least one pressure sensor maycomprise at least one spacer layer adjacent the IC die.

Another aspect is directed to a method of making a pressure sensingdevice. The method may include forming a body to distribute a loadapplied between first and second parts positioned one against the other,and coupling at least one pressure sensor carried by the body. The atleast one pressure sensor may include a support body, and an IC diemounted with the support body and defining a cavity therebetween. The ICdie may include pressure sensing circuitry responsive to bendingassociated with the cavity, and an IC interface coupled to the pressuresensing circuitry.

Yet another aspect is directed to a method of making another embodimentof the pressure sensing device. The method may include forming a bodyconfigured to distribute a load applied between first and second partspositioned one against the other, and coupling at least one pressuresensor carried by the body. The at least one sensor may include an ICdie mounted with the body and defining a cavity with adjacent portionsof the body. The IC die may include pressure sensing circuitryresponsive to bending associated with the cavity, and an IC interfacecoupled to the pressure sensing circuitry.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic diagram of a top plan view of a pressure sensingdevice, according to the present disclosure.

FIG. 1B is a schematic diagram of a cross-section view of the pressuresensing device of FIG. 1A along line 1B-1B.

FIG. 1C is a schematic diagram of a top plan view of a pressure sensingdevice with a ring-shaped body, according to the present disclosure.

FIG. 2 is a schematic diagram of a top plan view of an IC die from thepressure sensing device of FIG. 1A.

FIG. 3 is a schematic diagram of an embodiment of the IC die from thepressure sensing device of FIG. 1A.

FIGS. 4A-4D are schematic diagrams of a cross-section view of anotherembodiment of the pressure sensing device during manufacture.

FIGS. 5-9 are schematic diagrams of a top plan view of other embodimentsof the pressure sensing device.

FIGS. 10-14 are schematic diagrams of a side elevation plan view ofother embodiments of the pressure sensing device.

FIG. 15A is a schematic diagram of a top plan view of another embodimentof the pressure sensing device.

FIG. 15B is a schematic diagram of a cross-section view of the pressuresensing device of FIG. 15A along line 15B-15B.

FIGS. 16-18 are schematic diagrams of a top plan view of otherembodiments of the pressure sensing device.

FIGS. 19 and 20 are schematic diagrams of a cross-section view of otherembodiments of the pressure sensing device.

FIG. 21 is a schematic diagram of an embodiment of the IC die from thepressure sensing device.

FIGS. 22-23 are schematic diagrams of a side elevation plan view of thepressure sensing device of FIG. 19 during testing.

FIG. 24A is a schematic diagram of a top plan view of another embodimentof the pressure sensing device.

FIG. 24B is a schematic diagram of a cross-section view of the pressuresensing device of FIG. 24A along line 24B-24B.

FIG. 25 is a top plan view of the pressure sensing device of FIG. 24Aduring manufacture.

FIG. 26A is a schematic diagram of a top plan view of another embodimentof the pressure sensing device.

FIG. 26B is a schematic diagram of a cross-section view of the pressuresensing device of FIG. 26A along line 26B-26B.

FIG. 26C is a schematic diagram of a side elevation view of the pressuresensing device of FIG. 26A.

FIG. 27A is a schematic diagram of a top plan view of another embodimentof the pressure sensing device.

FIG. 27B is a schematic diagram of a cross-section view of the pressuresensing device of FIG. 27A along line 27B-27B.

FIG. 27C is a schematic diagram of a side elevation view of the pressuresensing device of FIG. 27A.

FIG. 28A is a schematic diagram of a top plan view of another embodimentof the pressure sensing device.

FIG. 28B is a schematic diagram of a cross-section view of the pressuresensing device of FIG. 28A along line 28B-28B.

FIG. 28C is a schematic diagram of a side elevation view of the pressuresensing device of FIG. 28A.

FIG. 29A is a schematic diagram of a top plan view of another embodimentof the pressure sensing device.

FIG. 29B is a schematic diagram of a cross-section view of the pressuresensing device of FIG. 29A along line 29B-29B.

FIG. 29C is a schematic diagram of a side elevation view of the pressuresensing device of FIG. 29A.

FIG. 30A is a schematic diagram of a top plan view of another embodimentof the pressure sensing device.

FIG. 30B is a schematic diagram of a cross-section view of the pressuresensing device of FIG. 30A along line 30B-30B.

FIG. 31 is a schematic diagram of a top plan view of another embodimentof the pressure sensing device.

FIGS. 32A and 32B are schematic diagrams of a top plan view of anotherembodiment of the pressure sensing device.

FIG. 32C is a schematic diagram of a cross-section view of the pressuresensing devices of FIGS. 32A and 32B along line 32C-32C.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The present disclosure will now be described more fully hereinafter withreference to the accompanying drawings, in which several embodiments ofthe invention are shown. This present disclosure may, however, beembodied in many different forms and should not be construed as limitedto the embodiments set forth herein. Rather, these embodiments areprovided so that this disclosure will be thorough and complete, and willfully convey the scope of the present disclosure to those skilled in theart. Like numbers refer to like elements throughout. Like numbers referto like elements throughout, and base 100 reference numerals are used toindicate similar elements in alternative embodiments.

Referring to FIGS. 1A-3 , a pressure sensing device no according to thepresent invention is now described. The pressure sensing device noillustratively includes a body in configured to distribute a loadapplied between first and second parts positioned one against the other(e.g. a threaded fastener, two aligned plates), and a pressure sensor112 carried by the body. The pressure sensor 112 illustratively includesa support body 114, and an IC die 113 mounted with the support body anddefining a cavity 120 therebetween.

In some embodiments, the body 111 may, for example, comprise aring-shaped body 2511 (FIG. 1C) configured to distribute a load of athreaded fastener, achieving a washer pressure sensing device 2510 (FIG.1C). The body 111 may have any kind of shape considering that the body111 can be comprised between two parts that are at least partiallyoverlapped applying a compressive stress on the body (as illustrated inthe pressure sensing device 1010 b in FIG. 13 ).

The IC die 113 illustratively includes a substrate 119 (e.g. silicon,gallium arsenide), pressure sensing circuitry 117 (e.g. piezoresistiveor piezoelectric pressure/stress detection circuitry) carried by thesubstrate and responsive to bending associated with the cavity 120, andan IC interface 118 (e.g. external reader wired or wireless interface)carried by the substrate and coupled to the pressure sensing circuitry.Advantageously, the substrate 119 and the support body 114 may provideprotection for the pressure sensing circuitry 117, thereby improvingreliability.

In an example, the cavity 120 may have a thickness of about 1 micrometer(or more), the substrate 119 may have a thickness of about 100micrometers, and the support body 114 may have a thickness of somehundreds of micrometers (i.e. 700 micrometers). This may advantageouslyenable the pressure sensing circuitry 117 to measure high pressurevalues, such as 100 atmospheres or more.

The pressure sensor 112 illustratively includes a bonding layer 115(e.g. glass frit bonding layer) between the IC die 113 and the supportbody 114. For example, the support body 114 may comprise at least one ofa ceramic material, a glass material, and a semiconductor material (e.g.silicon).

The IC interface 118, in an example, illustratively includes receiverand transmitter circuits 123, 124 (illustrated as separate circuits, buta combined circuit, commonly called a transceiver/transponder circuit,can be used), and electrically conductive antenna traces 116 carried bythe substrate 119 and coupled to the transceiver circuit and configuredto receive radio frequency (RF) energy. In the illustrated embodiment,the IC interface 118 also includes logic circuitry 125 coupled to thetransceiver circuit 123, 124, an RF harvester circuit 121 coupled to theantenna traces 116, and a power management circuit 122 coupled to the RFharvester circuit. The power management circuit 122 is coupled to allother circuits 123, 124, 125 and 117 to supply power to them. Anexternal antenna 127 is magnetically/electromagnetically coupled toantenna traces 116 to power the IC die 113. In other embodiments (notshown), the RF harvester circuit 121 and the power management circuit122 may be replaced by aa AC/DC converter, such as a rectifier circuit(and eventually a power control circuit like a limiter circuit) that maybe typically used in RFID and Smart Card ICs.

Another aspect is directed to a method of making the pressure sensingdevice 110. The method may include forming a body 111 to distribute aload applied between two opposite surface of the body in, and couplingat least one pressure sensor 112 carried by the body. The at least onepressure sensor 112 may include a support body 114, and an IC die 113mounted with the support body and defining a cavity 120 therebetween.The IC die 113 may include pressure sensing circuitry 117 responsive tobending associated with the cavity 120, and an IC interface 118 coupledto the pressure sensing circuitry.

Referring now additionally to FIGS. 4A-4D, another embodiment of thepressure sensing device 210 is now described. In this embodiment of thepressure sensing device 210, those elements already discussed above withrespect to FIG. 1 are incremented by 100 and most require no furtherdiscussion herein. This embodiment differs from the previous embodimentin that this pressure sensing device 210 illustratively includes thepressure sensor 212 comprising an substrate 229 adjacent the IC die 213and comprising a substrate 230, and additional electrically conductiveantenna traces 231 magnetically/electromagnetically coupled to theelectrically conductive antenna traces 216 (FIG. 4D). Advantageously,the substrate 219, the support body 214 and the bonding layer 215 mayhave high resistivity improving the coupling between electricallyconductive antenna traces 231, 216. Additionally, the additionalelectrically conductive antenna traces 231 may surround the IC die 213.As shown, the method of making this embodiment of the pressure sensingdevice 210 includes using a carrier layer 228.

The IC die 213 is stacked on the support body 214 and joined by bondinglayer 215. In more detail (FIG. 4A), the bonding layer 215 may be anuniform layer on the support body 214 and a portion of the layer can beremoved using standard techniques like an etching or a laser beam tocreate the cavity 220 with the IC die 213. The IC die 213 and thesupport body 214 are positioned on the carrier layer 228 (FIG. 4B), andthen encapsulated (FIG. 4C) using encapsulation material 232.

Once encapsulated, the carrier layer 228 may be released (FIG. 4D).Advantageously, the cavity 220 is created during assembly/packagingprocess and not during the semiconductor process steps by arecess/cavity in the substrate 219, simplifying production process andreducing manufacturing costs. Then, the cavity dimension can be easilymodified, avoiding modification of IC die 213, and changing the fullscale range and sensitivity of pressure sensor 212.

Referring now additionally to FIG. 5 , another embodiment of thepressure sensing washer device 310 is now described. In this embodimentof the pressure sensing washer device 310, those elements alreadydiscussed above with respect to FIGS. 1 and 4A-4D are incremented by 200and most require no further discussion herein. This embodiment differsfrom the previous embodiment in that this pressure sensing washer device310 illustratively includes the substrate 329 extending beyond the ICdie 313 and the ring-shaped body 311.

Advantageously, this embodiment may provide improved RF performancesince the additional electrically conductive antenna traces 331 extendbeyond the footprint of the threaded fastener, which typically comprisesa metallic material. Also, in this embodiment, the additionalelectrically conductive antenna traces 331 define a Hertz dipole farfield antenna, and the ring-shaped body 311 comprises encapsulationmaterial.

Referring now additionally to FIG. 6 , another embodiment of thepressure sensing washer device 410 is now described. In this embodimentof the pressure sensing washer device 410, those elements alreadydiscussed above with respect to FIG. 5 are incremented by 300 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that the encapsulation material also extendsbeyond the footprint of the threaded fastener and surrounds thesubstrate 429.

Referring now additionally to FIG. 7 , another embodiment of thepressure sensing washer device 510 is now described. In this embodimentof the pressure sensing washer device 510, those elements alreadydiscussed above with respect to FIG. 5 are incremented by 400 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that the substrate 529 is circle-shaped. In thisembodiment, the additional antenna traces 531 define a magnetic dipoleand near field antenna with a fringing capacitor. The pressure sensingwasher device 510 includes an arm extension extending outwardly from thering-shaped body 511, and the additional electrically conductive antennatraces 531 are carried by the arm extension.

Referring now additionally to FIG. 8 , another embodiment of thepressure sensing washer device 610 is now described. In this embodimentof the pressure sensing washer device 610, those elements alreadydiscussed above with respect to FIG. 7 are incremented by 500 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that the encapsulation material also extendsbeyond the footprint of the threaded fastener and surrounds thesubstrate 629.

Referring now additionally to FIG. 9 , another embodiment of thepressure sensing washer device 710 is now described. In this embodimentof the pressure sensing washer device 710, those elements alreadydiscussed above with respect to FIG. 5 are incremented by 600 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that the pressure sensing washer device 710illustratively includes a plurality of pressure sensors 712 a-712 dspaced apart 90 degrees on the ring-shaped body 711, and a plurality ofsubstrates 729 a-729 b extending beyond the IC die and the ring-shapedbody 711. Advantageously, the plurality of pressure sensors 712 a-712 dmay provide redundancy and improve reliability of the pressure sensingwasher device 710. Also, the additional antenna traces 731 a-731 b maybe polarized differently, thereby providing omnidirectional performance.In this embodiment, the ICs 712 b, 712 b without additional antennatraces may be dummy ICs, which ensure that mechanical stress throughoutthe ring-shaped body 711 is uniform. In other embodiments, the dummy ICs712 b, 712 b can also be functional and include respective substratesand circuits.

Referring now additionally to FIGS. 10 and 11 , another embodiment ofthe pressure sensing washer device 810 is now described. In thisembodiment of the pressure sensing washer device 810, those elementsalready discussed above with respect to FIG. 1 are incremented by 700and most require no further discussion herein. Here, the pressuresensing washer device 810 is installed with a fastener 833 (e.g.illustrated bolt) fixing together first and second plates 834 a-834 b.The pressure sensing washer device 810 is positioned between the head ofthe bolt 833 and an adjacent plate 834 a. In FIG. 10 , first and secondwasher layers 835 a-835 b (e.g. Teflon) are used to ensure uniformsurface stress and prevent damage to the pressure sensing washer device810 due to irregular surface features of the bolt 833. Second washerlayer 835 a and/or 835 b may improve also the coupling betweenelectrically conductive antenna traces 231, 216 in FIG. 4D increasingtheir distance with fastener 833 and/or first plates 834 a in case it isconductive.

Referring now additionally to FIG. 12 , another embodiment of thepressure sensing washer device 910 is now described. In this embodimentof the pressure sensing washer device 910, those elements alreadydiscussed above with respect to FIGS. 10 and 11 are incremented by 800and most require no further discussion herein. Here, the pressuresensing washer device 910 illustratively includes the substrate 929canted with respect to the pressure sensor 912 and the IC die therein,thereby improving RF performance.

Referring now additionally to FIGS. 13 and 14 , another embodiment ofthe pressure sensing device 1010 is now described. In this embodiment ofthe pressure sensing device 1010, those elements already discussed abovewith respect to FIG. 1 are incremented by 900 and most require nofurther discussion herein. Here, first and second pressure sensingdevice 1010 a-1010 b are installed and communicated with via an externalsystem 1035 and associated external antenna 1036. Helpfully, theexternal system 1035 may communicate with many devices simultaneously,for example, when inspecting a large structure. In FIG. 14 , an externalRF concentrator 1037, 1038 may be used to enhance RF performance betweenthe external system 1035 and the pressure sensing device 1010.

Referring now additionally to FIGS. 15A and 15B, another embodiment ofthe pressure sensing washer device 1110 is now described. In thisembodiment of the pressure sensing washer device 1110, those elementsalready discussed above with respect to FIG. 1 are incremented by 1000and most require no further discussion herein. This embodiment differsfrom the previous embodiment in that this pressure sensing washer device1110 illustratively includes the ring-shaped body 1111 having a slottherein, and the pressure sensor 1112 is positioned in the slot. Thepressure sensing washer device 1110 illustratively includesencapsulation material 1132 in the slot and surrounding the pressuresensor 1112. Here, the ring-shaped body 1111 may comprise a metallicmaterial, such as steel, nickel, or tungsten or a combination thereof.

Referring now additionally to FIGS. 16 and 18 , another embodiment ofthe pressure sensing device 1210 is now described. In this embodiment ofthe pressure sensing device 1210, those elements already discussed abovewith respect to FIG. 1 are incremented by 1100 and most require nofurther discussion herein. This embodiment differs from the previousembodiment in that this pressure sensing device 1210 illustrativelyincludes an RF connector 1239 coupled to the substrate 1229, whichreplaces the RF concentrator of FIG. 14 .

In FIG. 18 , a wired embodiment is shown. Here, three pressure sensingdevices 1210 a-1210 c are coupled to the external system 1235 via a wire1240 (e.g. coaxial cable) coupled to each RF connector 1239.

Referring now additionally to FIG. 17 , another embodiment of thepressure sensing device 3310 is now described. In this embodiment of thepressure sensing device 3310, those elements already discussed abovewith respect to FIG. 16 are incremented by 3200 and most require nofurther discussion herein. This embodiment differs from the previousembodiment in that this pressure sensing device 3310 illustrativelyincludes encapsulation material surrounding the RF connector 3339, andthe body 3311 is rectangle-shaped.

Referring now additionally to FIGS. 19 and 22 , another embodiment ofthe pressure sensing device 1310 is now described. In this embodiment ofthe pressure sensing device 1310, those elements already discussed abovewith respect to FIG. 1 are incremented by 1200 and most require nofurther discussion herein. This embodiment differs from the previousembodiment in that this pressure sensing device 1310 illustrativelyincludes a body 1711 configured to distribute a load of an externalcompressive stress, and a pressure sensor 1312 carried by the body. Thepressure sensor 1312 illustratively includes an IC die 1313 mounted withthe body and defining a cavity 1320 with adjacent portions of the body.The IC die 1313 illustratively includes pressure sensing circuitry 1317responsive to bending associated with the cavity, and an IC interface1318 coupled to the pressure sensing circuitry. More specifically, thepressure sensor 1312 illustratively includes a first spacer layer 1315adjacent the IC die 1313 and also defining the cavity, and a secondspacer layer 1341 adjacent the IC die. The first and second spacerlayers 1315, 1341 may comprise a metallic material, such as nickel,chrome, gold, aluminum, copper, gold-tin.

Yet another aspect is directed to a method of making the pressuresensing device 1310. The method may include forming a body configured todistribute a load of an external compressive stress, and coupling atleast one pressure sensor 1312 carried by the body. The at least onesensor 1312 may include an IC die 1313 mounted with the support body anddefining a cavity 1320 with adjacent portions of the body. The IC die1313 may include pressure sensing circuitry 1317 responsive to bendingassociated with the cavity, and an IC interface 1318 coupled to thepressure sensing circuitry.

In FIG. 22 , a wafer 1361 comprising a plurality of pressure sensingdevices 1312 a-1312 c is tested with testing system 1347. The testingsystem 1347 illustratively includes an arm 1348 comprising a rigidsubstrate 1353, a load cell 1351 coupled to the rigid substrate, a balljoint 1352 coupled to the load cell, and a contact plate 1360 forapplying set pressure to each pressure sensing device 1312 a-1312 c. Thetesting system 1347 illustratively includes a prober chuck 1349, and anAutomatic Testing Equipment (ATE) 1350 coupled to the arm 1348 and theprober chuck. The arm 1348 presses each pressure sensing device 1312a-1312 c and also provides power (via the contact plate 1360) andsignals to the device.

Referring now additionally to FIG. 20 , another embodiment of thepressure sensing device 1410 is now described. In this embodiment of thepressure sensing device 1410, those elements already discussed abovewith respect to FIG. 19 are incremented by 1300 and most require nofurther discussion herein. This embodiment differs from the previousembodiment in that this pressure sensing device 1410 illustrativelyincludes the second spacer layer 1441 extending across the entirety ofthe substrate 1419.

In FIGS. 4A-4D the cavity 220 is created starting from the support body114 instead of in FIGS. 19-20 the cavity 1320, 1420 is created startingfrom the IC die 1313 (on the bottom surface), 1314 (on the top surface).

Referring now additionally to FIG. 21 , another embodiment of thepressure sensing device is now described. In this embodiment of thepressure sensing device, IC die 1513 illustratively includes a filtercircuit 1542, a power line transceiver/transponder circuit 1544 coupledto the filter circuit, a controller circuit 1545 (that optionally mayinclude memory) coupled to the transceiver circuit, a sensor 1517coupled to the controller, and an AC/DC or a DC/DC converter 1546 (canbe omitted in other embodiments) coupled to the filter, transceiver, andcontroller circuits.

Referring now additionally to FIG. 23 , another embodiment of thetesting system 1647 is now described. In this embodiment of the testingsystem 1647, those elements already discussed above with respect toFIGS. 19 and 22 are incremented by 1500 and most require no furtherdiscussion herein. This embodiment differs from the previous embodimentin that this testing system 1647 tests a single pressure sensor 1612 ata time.

Referring now additionally to FIGS. 24A, 24B, and 25 , anotherembodiment of the pressure sensing washer device 1710 is now described.In this embodiment of the pressure sensing washer device 1710, thoseelements already discussed above with respect to FIG. 19 are incrementedby 1600 and most require no further discussion herein. This embodimentdiffers from the previous embodiment in that this pressure sensingwasher device 1710 is mounted onto the ring-shaped body 1711, whichincludes a connector 1754 extending outwardly therefrom. Here, thering-shaped body 1711 comprises a metallic material, and the firstspacer layer 1715 is soldered/welded onto the ring-shaped body to definethe cavity 1720. As shown in FIG. 25 , the ring-shaped body 1711 can bereadily manufactured in large numbers by forming a lead frame 1755.

Referring now additionally to FIGS. 26A, 26B, and 26C, anotherembodiment of the pressure sensing washer device 1810 is now described.In this embodiment of the pressure sensing washer device 1810, thoseelements already discussed above with respect to FIG. 19 are incrementedby 1700 and most require no further discussion herein. This embodimentdiffers from the previous embodiment in that this pressure sensingwasher device 1810 illustratively includes encapsulating material 1832surrounding the pressure sensor 1812 and covering the ring-shaped body1811.

Referring now additionally to FIGS. 27A, 27B, and 27C, anotherembodiment of the pressure sensing washer device 1910 is now described.In this embodiment of the pressure sensing washer device 1910, thoseelements already discussed above with respect to FIG. 19 are incrementedby 1800 and most require no further discussion herein. This embodimentdiffers from the previous embodiment in that this pressure sensingwasher device 1910 illustratively includes first and second ring-shapedbodies 1911 a-1911 b aligned together, and encapsulating material 1932between the ring-shaped bodies and surrounding the pressure sensor 1912.

Referring now additionally to FIGS. 28A, 28B, 28C, and 31 , anotherembodiment of the pressure sensing washer device 2010 is now described.In this embodiment of the pressure sensing washer device 2010, thoseelements already discussed above with respect to FIGS. 19 and 27A-27Care incremented by 1900 and most require no further discussion herein.This embodiment differs from the previous embodiment in that thispressure sensing washer device 2010 illustratively includes first andsecond insulator layers 2056 a-2056 b covering external surfaces of thefirst and second ring-shaped bodies 2011 b-2011 c. In FIG. 31 , a wiredembodiment is shown. Here, three pressure sensing devices 2010 a-2010 care coupled to the external system 2035 via wires 2040 a-2040 b (e.g.twisted pair cable).

Referring now additionally to FIGS. 29A, 29B, and 29C, anotherembodiment of the pressure sensing washer device 2110 is now described.In this embodiment of the pressure sensing washer device 2110, thoseelements already discussed above with respect to FIGS. 19 and 28A-28Care incremented by 2000 and most require no further discussion herein.This embodiment differs from the previous embodiment in that thispressure sensing washer device 2110 illustratively includes a mechanicalguide 2157 extending between the first and second ring-shaped bodies2111 a-2111 b, and the second insulator layer 2156 b includes a portion2158 that to meet the mechanical guide.

Referring now additionally to FIGS. 30A and 30B, another embodiment ofthe pressure sensing washer device 2210 is now described. In thisembodiment of the pressure sensing washer device 2210, those elementsalready discussed above with respect to FIGS. 19 and 28A-28C areincremented by 2100 and most require no further discussion herein. Thisembodiment differs from the previous embodiment in that this pressuresensing washer device 2210 illustratively includes the ring-shaped body2211 defining a ring-shaped recess therein, and the pressure sensor 2212is positioned within the ring-shaped recess. The pressure sensing washerdevice 2210 illustratively includes a ring-shaped layer 2262 over thepressure sensor 2212 and aligned with the ring-shaped recess.

Referring now additionally to FIGS. 32A, 32B, and 32C, anotherembodiment of the pressure sensing device 2310 is now described. In thisembodiment of the pressure sensing device 2310, those elements alreadydiscussed above with respect to FIGS. 19 and 28A-28C are incremented by2200 and most require no further discussion herein. This embodimentdiffers from the previous embodiment in that this pressure sensingdevice 2310 illustratively includes an IC die 2313 that is coupled bywire bonding 2380 to the substrate 2329, that surround the IC die 2313and is coupled with a connector 2339.

In FIG. 32A the pressure sensing device 2310 may have some openings 2482a-2482 d, for example, in the periphery, to join it with at least one ofthe two parts that apply the compressive stress. A body 2411, forexample, with T-shaped cross-section in FIG. 32B, is mechanicallycoupled with the IC die 2313 to apply the compressive stress.

Many modifications and other embodiments of the present disclosure willcome to the mind of one skilled in the art having the benefit of theteachings presented in the foregoing descriptions and the associateddrawings. Therefore, it is understood that the present disclosure is notto be limited to the specific embodiments disclosed, and thatmodifications and embodiments are intended to be included within thescope of the appended claims.

What is claimed is:
 1. A method, comprising: experiencing, by a firstpressure sensor in a pressure sensing system, an application of a firstload by a first member in a structure on a second member in thestructure, wherein the second member is positioned against the firstmember, and the first pressure sensor is carried in a first washer thatis disposed between the first member and the second member; detecting,by the first pressure sensor, a degree of a bending of a semiconductordie in the first pressure sensor, in response to the application of thefirst load; generating, by a pressure sensing circuitry in thesemiconductor die, a first output in accordance with the degree of thebending that is detected in the semiconductor die; transmitting, by anintegrated circuit (IC) interface in the semiconductor die, the firstoutput to a first external antenna trace that is carried by a firstsubstrate that is adjacent to the first pressure sensor; andtransmitting, by the first external antenna trace, the first output toan external system that monitors the pressure sensing system, whereinthe first pressure sensor comprises: the semiconductor die comprising anunsupported middle and two supported sides on either side of theunsupported middle, wherein the two supported sides are mounted on asupport body; and a cavity inside the first pressure sensor, wherein thecavity is disposed between the two supported sides, below theunsupported middle, and above the support body, wherein the IC interfacecomprises a transceiver circuit, and an internal antenna trace coupledto the transceiver circuit, and wherein the internal antenna trace ismagnetically or electromagnetically coupled to the first externalantenna trace, and wherein the internal antenna trace is disposed overan area where a supported side of the semiconductor die is mounted onthe support body.
 2. The method of claim 1, wherein the semiconductordie comprises the pressure sensing circuitry, and the IC interfacecoupled to the pressure sensing circuitry, wherein the pressure sensingcircuitry is disposed in the unsupported middle, and over a portion ofthe cavity.
 3. The method of claim 2, wherein the pressure sensingcircuitry is configured to be responsive to the bending of thesemiconductor die through the unsupported middle.
 4. A method ofmanufacturing a sensing device, the method comprising: having a firstintegrated circuit (IC) die comprising a first pressure sensingcircuitry and a first IC interface coupled to the first pressure sensingcircuitry, the first IC die being disposed between first and secondparts positioned one against the other, the first IC interfacecomprising a first transceiver circuit, and first inner electricallyconductive antenna traces coupled to the first IC interface, the firstinner electrically conductive antenna trances being magnetically orelectromagnetically coupled to first outer electrically conductiveantenna traces; attaching a first support body to the first IC die witha bonding layer to form a first cavity between the first IC die and thefirst support body, wherein the bonding layer supports peripheralregions of the first IC die with an unsupported central region of thefirst IC die disposed over the first cavity; and encapsulating the firstsupport body and the first IC die with an encapsulation material to forma ring shaped body to distribute a load applied between the first andsecond parts, the first pressure sensing circuitry being responsive tobending associated with the first cavity.
 5. The method of claim 4,wherein having the substrate comprises having a ring shaped portion anda first arm extension portion that extends beyond the first IC die andthe ring shaped portion, and first outer electrically conductive antennatraces formed in the first arm extension portion disposed around thefirst inner electrically conductive antenna traces.
 6. The method ofclaim 5, wherein the first arm extension portion comprises a circularshape so that the first outer electrically conductive antenna traces areconfigured to define a magnetic dipole.
 7. The method of claim 5,wherein encapsulating the support body comprises encapsulating the firstarm extension portion.
 8. The method of claim 5, further comprising:having a second integrated circuit (IC) die comprising a second pressuresensing circuitry and a second IC interface coupled to the secondpressure sensing circuitry; and attaching a second support body to thesecond IC die with a second bonding layer to form a second cavitybetween the second IC die and the second support body, wherein theencapsulating comprises also encapsulating the second support body andthe second IC die with the encapsulation material to form the ringshaped body, the second pressure sensing circuitry being responsive tobending associated with the second cavity.
 9. The method of claim 8,wherein having the substrate further comprises a second arm extensionportion that extends beyond the second IC die and the ring shaped bodyin a different direction than the first arm extension portion.
 10. Themethod of claim 1, further comprising: experiencing, by a secondpressure sensor in a pressure sensing system, an application of a secondload by a third member in a structure on a fourth member in thestructure, wherein the third member is positioned against the fourthmember, and the second pressure sensor is carried in a second washerthat is disposed between the third member and the fourth member;detecting, by the second pressure sensor, a degree of a bending of asemiconductor die in the second pressure sensor, in response to theapplication of the second load; generating, by the second pressuresensor, a second output in accordance with the degree of the bendingthat is detected by the second pressure sensor; and transmitting, by thesecond pressure sensor, the second output to the external system. 11.The method of claim 10, wherein transmitting, by the first pressuresensor, the first output to the external system comprises: transmitting,by the first pressure sensor, the first output to the second pressuresensor via a wire connecting the first pressure sensor to the secondpressure sensor; and transmitting, by the second pressure sensor, thefirst output to the external system.
 12. The method of claim 1, whereinthe experiencing and the detecting are performed in a testing systemcomprising the first member and the second member, the first membercomprising a rigid substrate, a load cell coupled to the rigidsubstrate, a ball joint coupled to the load cell, and a contact plateconfigured to apply a set pressure to a top surface of the firstpressure sensor, the second member comprising a prober chuck positionedadjacent to a bottom surface of the first pressure sensor and configuredto support the first pressure sensor.
 13. The method of claim 4, furthercomprising: having a substrate mounted on a carrier substrate, thesubstrate comprising the first outer electrically conductive antennatraces; before encapsulating the first support body and the first ICdie, mounting the first support body on the carrier so that the firstouter electrically conductive antenna traces are disposed around thefirst inner electrically conductive antenna traces; and releasing thecarrier substrate after the encapsulating.
 14. The method of claim 4,wherein attaching a first support body to the first IC die comprisesattaching with a bonding layer.
 15. A method of manufacturing a sensingdevice, the method comprising: having a first integrated circuit (IC)die comprising a first pressure sensing circuitry and a first ICinterface coupled to the first pressure sensing circuitry, the first ICdie being disposed between first and second parts positioned one againstthe other, the first IC interface comprising a first transceivercircuit, and first inner electrically conductive antenna traces coupledto the first IC interface, the first inner electrically conductiveantenna trances being magnetically or electromagnetically coupled tofirst outer electrically conductive antenna traces; attaching a firstmetallic ring shaped body to the first IC die to form a first cavitybetween the first IC die and the first metallic ring shaped body; andencapsulating the first IC die with an encapsulation material to form aring shaped body to distribute a load applied between the first andsecond parts, the first pressure sensing circuitry being responsive tobending associated with the first cavity.
 16. The method of claim 15,wherein attaching the first metallic ring shaped body to the first ICdie comprises soldering the first metallic ring shaped body with thefirst IC die.
 17. The method of claim 15, further comprising: providinga lead frame comprising a plurality of support bodies, the firstmetallic ring shaped body being one of the plurality of support bodies.18. The method of claim 15, wherein the first metallic ring shaped bodycomprises a first connector configured to electrically couple with theIC die.
 19. The method of claim 18, further comprising forming a wirebond coupling the IC die with the first connector.
 20. The method ofclaim 15, wherein the encapsulating comprises covering the firstmetallic ring shaped body.
 21. The method of claim 15, furthercomprising attaching a second metallic ring shaped body so that the ICdie is between the first and the second metallic ring shaped bodies, thefirst metallic ring shaped body comprising a first connector configuredto electrically couple with the IC die, and the second metallic ringshaped body comprising a second connector configured to electricallycouple with the IC die.
 22. The method of claim 15, further comprisingforming a first insulator layer covering a substantial portion of thefirst metallic ring shaped body and a second insulator layer covering asubstantial portion of the second metallic ring shaped body.
 23. Themethod of claim 15, further comprising forming a mechanical guidebetween the first and the second metallic ring shaped bodies.
 24. Themethod of claim 15, wherein the first metallic ring shaped bodycomprises a ring shaped recess in which the IC die is attached.